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| The '''saturation current''' or, more accurately, the '''reverse saturation current''' is that part of the reverse current in a [[semiconductor]] [[diode]] caused by diffusion of minority [[charge carrier|carriers]] from the neutral regions to the [[depletion region]]. This current is almost independent of the reverse voltage. (Steadman 1993, 459)
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| ''I''<sub>S</sub>, the reverse bias saturation current for an ideal p–n [[diode]] is given by (Schubert 2006, 61): | |
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| <math>I_\mathrm{S} = e A \left( \sqrt{\frac{D_\mathrm{p}}{\tau_\mathrm{p}}} \frac{n_\mathrm{i}^2}{N_\mathrm{D}} + \sqrt{\frac{D_\mathrm{n}}{\tau_\mathrm{n}}} \frac{n_\mathrm{i}^2}{N_\mathrm{A}} \right),\,</math>
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| where
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| :''I''<sub>S</sub> is the reverse bias saturation current,
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| :''e'' is [[elementary charge]]
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| :''A'' is the cross-sectional area
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| :''D''<sub>p,n</sub> are the [[diffusion coefficient]]s of holes and electrons, respectively,
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| :''N''<sub>D,A</sub> are the donor and acceptor concentrations at the n side and p side, respectively,
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| :''n''<sub>i</sub> is the intrinsic carrier concentration in the semiconductor material, | |
| :<math>\tau_\mathrm{p,n}</math> are the carrier lifetimes of holes and electrons, respectively. | |
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| Note that the saturation current is ''not'' a constant for a given device; it [http://www.pveducation.org/pvcdrom/solar-cell-operation/effect-of-temperature varies] with temperature; this variance is the dominant term in the temperature coefficient for a diode. A common rule of thumb is that it doubles for every 10°C rise in temperature. (Bogart 1986, 40)
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| ==References==
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| * Steadman, J. W. (1993). "Electronics" in R. C. Dorf, ''The Electrical Engineering Handbook.'' Boca Raton: CRC Press.
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| * Schubert, E. Fred. (2006). "LED basics: Electrical properties" in ''Light-Emitting Diodes'' : Cambridge Press.
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| * Bogart, F. Theodore Jr. (1986). "Electronic Devices and Circuits" : Merill Publishing Company
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| {{DEFAULTSORT:Saturation Current}}
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| [[Category:Diodes]]
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