Performance engineering: Difference between revisions

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Energy band diagram of a simple NPN [[bipolar junction transistor]] in forward-active mode showing electron energy versus position. The [[depletion region]]s of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the [[conduction band]], <math>E_f</math> indicates the quasi-[[fermi energy]] levels, <math>E_i</math> is the intrinsic Fermi level of the undoped semiconductor, and <math>E_v</math> is the [[valence band]].  This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.
 
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Latest revision as of 12:46, 23 August 2014

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