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The '''CPU core voltage''' ('''''V<sub>CORE</sub>''''') is the [[power supply]] [[voltage]] supplied to the [[central processing unit|CPU]] (which is a [[digital circuit]]), [[Graphics processing unit|GPU]], or other device containing a processing core. The amount of [[Power_(physics)|power]] a CPU uses, and thus the amount of heat it dissipates, is the product of this voltage and the [[Current_(electricity)|current]] it draws.
In modern CPUs, which are made using [[CMOS]],
the current is almost proportional to the [[Clock_rate|clock speed]], the CPU drawing almost no current between clock cycles. (See, however, [[subthreshold leakage]].)
 
In order to help conserve power and manage heat, many [[laptop]] and [[desktop computer|desktop]] processors have a [[power management]] feature that allows software (usually the [[operating system]]) to [[dynamic frequency scaling |adjust the clock speed]] and [[dynamic voltage scaling | core voltage dynamically]].
 
The trend is towards lower core voltages, which conserve power. This presents the CMOS designer with a challenge, because in CMOS the voltages go only to ground and the supply voltage, the source, gate, and drain terminals of the [[Field effect transistor|FETs]] have only the supply voltage or zero voltage across them.
 
The [[MOSFET]] formula: <math>\,I_D = k((V_{GS}-V_{tn})V_{DS}-(V_{DS}/2)^2)</math> says that the current <math>I_D</math> supplied by the FET is proportional to the gate-source voltage reduced by a [[Threshold_Voltage|threshold voltage]] <math>V_{tn}</math> which is dependent on the geometrical shape of the FET's channel and gate and their physical properties, especially [[capacitance]]. In order to reduce <math>V_{tn}</math> (necessary both in order to reduce the supply voltage and to increase current) one must increase capacitance.  But, the load being driven is in fact another FET gate. The current needed to drive it is proportional to capacitance, which thus requires the designer to keep it low.  
 
The trend towards lower supply voltage therefore works against the goal of high clock speed.
Only improvements in [[photolithography]] and reduction in threshold voltage allow both to improve at once. On another note, the formula shown above is for long channel MOSFETs. With the area of the MOSFETs halving every 18-24 months ([[Moore's law]]) the distance between the two terminals of the MOSFET switch called the channel length is becoming smaller and smaller. This changes the nature of the relationship between terminal voltages and current.  
 
When a processor is [[overclocking|overclocked]] the processor increases the core voltage at the cost of system stability, power consumption and heat dissipation. This is known as [[Dynamic voltage scaling|overvolting]].  Overvolting generally involves running a processor out of its specifications, which may damage it or shorten CPU life.
 
== See also ==
* [[Dynamic voltage scaling]]
* [[Switched-mode power supply applications]] (SMPS) applications
 
==References==
{{reflist}}
 
==External links==
* [http://www.hardwareanalysis.com/content/article/1482/ Hardwareanalysis.com's article about how to increase voltage to help overclocking]
 
 
[[Category:Central processing unit]]

Latest revision as of 22:53, 29 March 2013

The CPU core voltage (VCORE) is the power supply voltage supplied to the CPU (which is a digital circuit), GPU, or other device containing a processing core. The amount of power a CPU uses, and thus the amount of heat it dissipates, is the product of this voltage and the current it draws. In modern CPUs, which are made using CMOS, the current is almost proportional to the clock speed, the CPU drawing almost no current between clock cycles. (See, however, subthreshold leakage.)

In order to help conserve power and manage heat, many laptop and desktop processors have a power management feature that allows software (usually the operating system) to adjust the clock speed and core voltage dynamically.

The trend is towards lower core voltages, which conserve power. This presents the CMOS designer with a challenge, because in CMOS the voltages go only to ground and the supply voltage, the source, gate, and drain terminals of the FETs have only the supply voltage or zero voltage across them.

The MOSFET formula: ID=k((VGSVtn)VDS(VDS/2)2) says that the current ID supplied by the FET is proportional to the gate-source voltage reduced by a threshold voltage Vtn which is dependent on the geometrical shape of the FET's channel and gate and their physical properties, especially capacitance. In order to reduce Vtn (necessary both in order to reduce the supply voltage and to increase current) one must increase capacitance. But, the load being driven is in fact another FET gate. The current needed to drive it is proportional to capacitance, which thus requires the designer to keep it low.

The trend towards lower supply voltage therefore works against the goal of high clock speed. Only improvements in photolithography and reduction in threshold voltage allow both to improve at once. On another note, the formula shown above is for long channel MOSFETs. With the area of the MOSFETs halving every 18-24 months (Moore's law) the distance between the two terminals of the MOSFET switch called the channel length is becoming smaller and smaller. This changes the nature of the relationship between terminal voltages and current.

When a processor is overclocked the processor increases the core voltage at the cost of system stability, power consumption and heat dissipation. This is known as overvolting. Overvolting generally involves running a processor out of its specifications, which may damage it or shorten CPU life.

See also

References

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External links