https://en.formulasearchengine.com/index.php?action=history&feed=atom&title=Blossom_algorithmBlossom algorithm - Revision history2026-05-20T16:16:40ZRevision history for this page on the wikiMediaWiki 1.43.0-wmf.28https://en.formulasearchengine.com/index.php?title=Blossom_algorithm&diff=265081&oldid=preven>Favonian: Reverted edits by 2602:306:367A:E5B0:8567:84B9:F74C:E806 (talk) to last version by Dbmikus2014-12-30T18:24:47Z<p>Reverted edits by <a href="/wiki/Special:Contributions/2602:306:367A:E5B0:8567:84B9:F74C:E806" title="Special:Contributions/2602:306:367A:E5B0:8567:84B9:F74C:E806">2602:306:367A:E5B0:8567:84B9:F74C:E806</a> (<a href="/index.php?title=User_talk:2602:306:367A:E5B0:8567:84B9:F74C:E806&action=edit&redlink=1" class="new" title="User talk:2602:306:367A:E5B0:8567:84B9:F74C:E806 (page does not exist)">talk</a>) to last version by Dbmikus</p>
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<td colspan="2" style="background-color: #fff; color: #202122; text-align: center;">Revision as of 20:24, 30 December 2014</td>
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<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">[[File:MIS-Kondensator (vertikal).svg|thumb|MIS structure (Metal / SiO<sub>2</sub> / ''p''-Si) in a vertical MIS capacitor]]</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">A '''MIS capacitor''' is a capacitor formed from a layer of [[metal]], a layer of [[Electrical insulation|insulating]] material and a layer of [[semiconductor]] material. It gets its name from the initials of the metal-insulator-semiconductor structure. As with the MOS [[field-effect transistor]] structure, for historical reasons, this layer is also often referred to as a MOS capacitor, but this specifically refers to an oxide insulator material.</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><br></td><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><br></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">The maximum capacitance, ''C''<sub>MIS(max)</sub> is calculated analogously to the plate capacitor:</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><br></td><td class="diff-marker"></td><td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><br></td></tr>
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<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">where :</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">*''&epsilon;<sub>r</sub>'' </del>is the <del style="font-weight: bold; text-decoration: none;">insulator's [[relative permittivity]]</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">*''&epsilon;</del><<del style="font-weight: bold; text-decoration: none;">sub</del>><del style="font-weight: bold; text-decoration: none;">0</del><<del style="font-weight: bold; text-decoration: none;">/sub</del>><del style="font-weight: bold; text-decoration: none;">'' </del>is the [<del style="font-weight: bold; text-decoration: none;">[permittivity</del>]<del style="font-weight: bold; text-decoration: none;">] of </del>the <del style="font-weight: bold; text-decoration: none;">[[vacuum]]</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">*''A'' </del>is the <del style="font-weight: bold; text-decoration: none;">area</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">*''d'' is </del>the <del style="font-weight: bold; text-decoration: none;">insulator thickness</del></div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div> </div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">The production method depends on materials used (it is even possible that polymers </del>can <del style="font-weight: bold; text-decoration: none;">be used </del>as the <del style="font-weight: bold; text-decoration: none;">insulator)</del>. <del style="font-weight: bold; text-decoration: none;">We will consider an example </del>of a <del style="font-weight: bold; text-decoration: none;">MOS capacitor based </del>on <del style="font-weight: bold; text-decoration: none;">[[silicon]] </del>and <del style="font-weight: bold; text-decoration: none;">[[silicon dioxide]]</del>. <del style="font-weight: bold; text-decoration: none;">On </del>the <del style="font-weight: bold; text-decoration: none;">semiconductor substrate, a thin layer </del>of <del style="font-weight: bold; text-decoration: none;">oxide (silicon dioxide) is applied (by</del>, for <del style="font-weight: bold; text-decoration: none;">example, [[thermal oxidation]], or [[chemical vapour deposition]]) and then [[Evaporation (deposition)|coated]] with a metal</del>.</div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div> </div></td><td colspan="2" class="diff-side-added"></td></tr>
<tr><td class="diff-marker" data-marker="−"></td><td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">This structure </del>and <del style="font-weight: bold; text-decoration: none;">thus </del>a <del style="font-weight: bold; text-decoration: none;">capacitor </del>of this <del style="font-weight: bold; text-decoration: none;">type </del>is <del style="font-weight: bold; text-decoration: none;">present </del>in <del style="font-weight: bold; text-decoration: none;">every MIS field-effect transistor</del>, <del style="font-weight: bold; text-decoration: none;">such as </del>[<del style="font-weight: bold; text-decoration: none;">[MOSFET</del>]<del style="font-weight: bold; text-decoration: none;">]s</del>. <del style="font-weight: bold; text-decoration: none;">For the steady reduction </del>of the <del style="font-weight: bold; text-decoration: none;">size of structures in microelectronics</del>, the <del style="font-weight: bold; text-decoration: none;">following facts are clear</del>. <del style="font-weight: bold; text-decoration: none;">From </del>the <del style="font-weight: bold; text-decoration: none;">formula above it follows that capacitance increases with ever thinner layers of insulation. For </del>all <del style="font-weight: bold; text-decoration: none;">MIS devices </del>the <del style="font-weight: bold; text-decoration: none;">insulation thickness cannot fall below a minimum </del>of <del style="font-weight: bold; text-decoration: none;">around 10&nbsp;nm</del>. <del style="font-weight: bold; text-decoration: none;">Using thinner insultation than </del>this <del style="font-weight: bold; text-decoration: none;">leads </del>to the <del style="font-weight: bold; text-decoration: none;">occurrence </del>of <del style="font-weight: bold; text-decoration: none;">[[quantum tunnelling|tunneling]] through </del>the <del style="font-weight: bold; text-decoration: none;">insulating material (dielectric)</del>. <del style="font-weight: bold; text-decoration: none;">Due </del>to <del style="font-weight: bold; text-decoration: none;">this, </del>the use <del style="font-weight: bold; text-decoration: none;">of so-called </del>[<del style="font-weight: bold; text-decoration: none;">[High-k dielectric|high-k</del>]<del style="font-weight: bold; text-decoration: none;">] materials as the insulator material is being investigated (as of 2009</del>).</div></td><td colspan="2" class="diff-side-added"></td></tr>
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</table>en>Favonianhttps://en.formulasearchengine.com/index.php?title=Blossom_algorithm&diff=24656&oldid=preven>Mark viking: Added wl2014-01-17T05:06:38Z<p>Added wl</p>
<a href="https://en.formulasearchengine.com/index.php?title=Blossom_algorithm&diff=24656&oldid=265080">Show changes</a>en>Mark vikinghttps://en.formulasearchengine.com/index.php?title=Blossom_algorithm&diff=265080&oldid=preven>Bender2k14: /* Analysis */ moved a period to before a reference2012-08-14T14:47:03Z<p><span class="autocomment">Analysis: </span> moved a period to before a reference</p>
<a href="https://en.formulasearchengine.com/index.php?title=Blossom_algorithm&diff=265080">Show changes</a>en>Bender2k14